Semiconductor device for generating a reference current or voltage in various temperatures

ABSTRACT

A bandgap reference circuit includes a plurality of current sources including different temperature coefficients, a first trimmer, and a mixer, The first trimmer adjusts current amounts for a plurality of currents, which are individually output from each of the plurality of current sources, to be equal to each other. The mixer adjusts an aggregate ratio and combines the plurality of currents based on the aggregate ratio.

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application claims the benefit to Korean Patent ApplicationNo. 10-2022-0008446, filed on Jan. 20, 2022, the entire disclosure ofwhich is incorporated herein by reference.

TECHNICAL FIELD

Various embodiments of the present disclosure described herein relate toa semiconductor device, and, more particularly, to an apparatus capableof generating a reference current or a reference voltage in varioustemperatures.

BACKGROUND

A semiconductor device may be designed to operate stably even with achange in PVT. Here, the change (or variation) in the PVT (Process,Voltage, Temperature) may include a process variation which is aphenomenon in which operation speeds of PMOS/NMOS transistors aredifferent due to a cause in a manufacturing of the semiconductor device,a temperature variation which is another phenomenon in which theoperations speeds of the PMOS/NMOS transistors varies depending on atemperature inside the semiconductor device, and a voltage variationwhich is another phenomenon in which the operation speeds of thePMOS/NMOS transistors changes according to a voltage or power suppliedto the semiconductor device.

A bandgap reference circuit may be a kind of important components inanalog and digital systems and be embedded and used as a referencevoltage source or reference current source. A power supply voltage ofanalog and digital systems is getting lower for less power consumption,which is feasible due to manufacturing technology development. A bandgapreference circuit included in the analog and digital systems can operateat a low voltage to compensate for the change of temperature.

BRIEF DESCRIPTION OF THE DRAWINGS

The description herein makes reference to the accompanying drawingswherein like reference numerals refer to like parts throughout thefigures.

FIG. 1 illustrates a memory system according to an embodiment of thepresent disclosure.

FIG. 2 illustrates a semiconductor device according to anotherembodiment of the present disclosure.

FIG. 3 illustrates a clock signal generator according to anotherembodiment of the present disclosure.

FIG. 4 describes an operation of the clock signal generator illustratedin FIG. 3 .

FIG. 5 illustrates a current source shown in FIG. 3 .

FIG. 6 illustrates a reference current generator including a pluralityof current sources having different temperature trends.

FIG. 7 describes an operation of the reference current generator shownin FIG. 6 .

FIG. 8 describes temperature-specific characteristics of the referencecurrent generator shown in FIG. 6 .

FIG. 9 describes that compensation for a temperature change of thereference current generator shown in FIG. 6 varies according to a changein a manufacturing process.

FIG. 10 illustrates a clock signal generator according to anotherembodiment of the present disclosure.

FIG. 11 illustrates an example of a reference current generator shown inFIG. 10 .

FIG. 12 illustrates another example of the reference current generatorshown in FIG. 10 .

FIG. 13 illustrates an effect corresponding to a temperature change inan operation of the reference current generator shown in FIG. 10 .

DETAILED DESCRIPTION

Various embodiments of the present disclosure are described below withreference to the accompanying drawings. Elements and features of thedisclosure, however, may be configured or arranged differently to formother embodiments, which may be variations of any of the disclosedembodiments.

In this disclosure, references to various features (e.g., elements,structures, modules, components, steps, operations, characteristics,etc.) included in “one embodiment,” “example embodiment,” “anembodiment,” “another embodiment,” “some embodiments,” “variousembodiments,” “other embodiments,” “alternative embodiment,” and thelike are intended to mean that any such features are included in one ormore embodiments of the present disclosure, but may or may notnecessarily be combined in the same embodiments.

In this disclosure, the terms “comprise,” “comprising,” “include,” and“including” are open-ended. As used in the appended claims, these termsspecify the presence of the stated elements and do not preclude thepresence or addition of one or more other elements. The terms in a claimdo not foreclose the apparatus from including additional components(e.g., an interface unit, circuitry, etc.).

In this disclosure, various units, circuits, or other components may bedescribed or claimed as “configured to” perform a task or tasks. In suchcontexts, “configured to” is used to connote structure by indicatingthat the blocks/units/circuits/components include structure (e.g.,circuitry) that performs one or more tasks during operation. As such,the block/unit/circuit/component can be said to be configured to performthe task even when the specified block/unit/circuit/component is notcurrently operational (e.g., is not turned on nor activated). Theblock/unit/circuit/component used with the “configured to” languageincludes hardware-for example, circuits, memory storing programinstructions executable to implement the operation, etc. Additionally,“configured to” can include a generic structure (e.g., genericcircuitry) that is manipulated by software and/or firmware (e.g., anFPGA or a general-purpose processor executing software) to operate in amanner that is capable of performing the task(s) at issue. “Configuredto” may also include adapting a manufacturing process (e.g., asemiconductor fabrication facility) to fabricate devices (e.g.,integrated circuits) that implement or perform one or more tasks.

As used in the disclosure, the term ‘circuitry’ or ‘logic’ refers to allof the following: (a) hardware-only circuit implementations (such asimplementations in only analog and/or digital circuitry) and (b)combinations of circuits and software (and/or firmware), such as (asapplicable): (i) to a combination of processor(s) or (ii) to portions ofprocessor(s)/software (including digital signal processor(s)), software,and memory(ies) that work together to cause an apparatus, such as amobile phone or server, to perform various functions and (c) circuits,such as a microprocessor(s) or a portion of a microprocessor(s), thatrequire software or firmware for operation, even if the software orfirmware is not physically present. This definition of ‘circuitry’ or‘logic’ applies to all uses of this term in this application, includingin any claims. As a further example, as used in this application, theterm “circuitry” or “logic” also covers an implementation of merely aprocessor (or multiple processors) or a portion of a processor and its(or their) accompanying software and/or firmware. The term “circuitry”or “logic” also covers, for example, and if applicable to a particularclaim element, an integrated circuit for a storage device.

As used herein, the terms “first,” “second,” “third,” and so on are usedas labels for nouns that the terms precede, and do not imply any type ofordering (e.g., spatial, temporal, logical, etc.). The terms “first” and“second” do not necessarily imply that the first value must be writtenbefore the second value. Further, although the terms may be used hereinto identify various elements, these elements are not limited by theseterms. These terms are used to distinguish one element from anotherelement that otherwise have the same or similar names. For example, afirst circuitry may be distinguished from a second circuitry.

Further, the term “based on” is used to describe one or more factorsthat affect a determination. This term does not foreclose additionalfactors that may affect a determination. That is, a determination may besolely based on those factors or based, at least in part, on thosefactors. For example, the phrase “determine A based on B.” While in thiscase, B is a factor that affects the determination of A, such a phrasedoes not foreclose the determination of A from also being based on C. Inother instances, A may be determined based solely on B.

Herein, an item of data, a data item, a data entry or an entry of datamay be a sequence of bits. For example, the data item may include thecontents of a foe, a portion of the foe, a page in memory, an object inan object-oriented program, a digital message, a digital scanned image,a part of a video or audio signal, metadata or any other entity whichcan be represented by a sequence of bits. According to an embodiment,the data item may include a discrete object. According to anotherembodiment, the data item may include a unit of information within atransmission packet between two different components.

An embodiment of the present disclosure can provide a circuit or adevice supporting a stable operation by compensating for a temperaturechange inside a semiconductor device. In addition, in an embodiment, thesemiconductor device compensating for the temperature change can providea memory system or a data processing system which is capable of safelyprotecting and rapidly handling data stored in a memory device.

Embodiments of the present disclosure can provide a bandgap referencecircuit, a clock signal generator including the bandgap referencecircuit, a power circuit including the bandgap reference circuit, asemiconductor device including the clock signal generator or the powersupply circuit, a memory system including the semiconductor device, anda data processing apparatus including the memory system.

In an embodiment, a bandgap reference circuit can include a plurality ofcurrent sources having different temperature coefficients; a firsttrimmer configured to adjust current amounts of a plurality of currents,which are individually output from each of the plurality of currentsources, to be equal to each other; and a mixer configured to adjust anaggregate ratio and combine the plurality of currents based on theaggregate ratio.

The plurality of current sources can include a first current sourceconfigured to decrease a current amount of a first current among theplurality of currents; and a second current source configured toincrease a current amount of a second current among the plurality ofcurrents.

The first current source can include plural diodes, pluraldiode-connected transistors, or plural bipolar junction transistors(BJTs). The second current source can output a difference betweencurrents flowing through two components having different sizes in thefirst current source.

The first trimer can adjust an amount of the first current output fromthe first current source.

The bandgap reference circuit can further include a comparatorconfigured to compare a second current output from one of the pluralityof current sources with a first current output through the firsttrimmer. An adjustment, performed by the first trimmer, for at least onecurrent amount for the plurality of currents can be monitored at a firsttemperature based on a comparison result of the comparator.

The mixer can adjust current amounts for the plurality of currents at asecond temperature, which is different from the first temperature, to beequal to each other. The mixer can include a second trimer configured toadjust a current amount of the first current at the second temperature;a third trimer configured to adjust a current amount of the secondcurrent at the second temperature; and a combiner configured to combineoutputs of the second trimer and the third trimer.

The bandgap reference circuit can further include a fourth trimerconfigured to adjust a current amount of current output from the mixerbased on a preset reference. The word “preset” as used herein withrespect to a parameter, such as a preset reference, preset period,preset function or purpose, and preset range, means that a value for theparameter is determined prior to the parameter being used in a processor algorithm. For some embodiments, the value for the parameter isdetermined before the process or algorithm begins. In other embodiments,the value for the parameter is determined during the process oralgorithm but before the parameter is used in the process or algorithm.

In another embodiment, a clock signal generator can include a bandgapreference circuit configured to adjust current amounts of a plurality ofcurrents, which are individually output from each of the plurality ofcurrent sources having different temperature coefficients, to be equalto each other, adjust an aggregate ratio, and combine the plurality ofcurrents based on the aggregate ratio to output a combined current as areference current; and an oscillator configured to generate a clocksignal based on the reference current.

The plurality of current sources can include a first current sourceconfigured to decrease an amount of a first current among the pluralityof currents; and a second current source configured to increase acurrent amount of a second current among the plurality of currents.

The bandgap reference circuit can include a first trimmer configured toadjust a current amount of the first current output from the firstcurrent source according to a current amount of the second current; anda mixer configured to adjust an aggregate ratio and combine the firstcurrent and the second current based on the aggregate ratio.

The bandgap reference circuit can further include a comparatorconfigured to compare a second current output from one of the pluralityof current sources with a first current output through the firsttrimmer. An adjustment, performed by the first trimmer, for at least onecurrent amount for the plurality of currents can be monitored at a firsttemperature based on a comparison result of the comparator.

The mixer can adjust the current amounts of the plurality of currents ata second temperature, which is different from the first temperature, tobe equal to each other. The mixer can include a second trimer configuredto adjust the current amount of the first current at the secondtemperature; a third trimer configured to adjust the current amount ofthe second current at the second temperature; and a combiner configuredto combine outputs of the second trimer and the third trimer.

The bandgap reference circuit can further include a fourth trimerconfigured to adjust a current amount of current output from the mixerbased on a preset reference.

In another embodiment, a power circuit can include a bandgap referencecircuit configured to adjust voltage levels of a plurality of voltages,which are individually output from each of a plurality of voltagesources having different temperature coefficients, to be equal to eachother, adjust an aggregate ratio, and combine the plurality of voltagesbased on the aggregate ratio to output a combined voltage as a referencevoltage; and a regulator configured to receive an external power voltageto generate an internal power supply voltage based on the referencevoltage.

The plurality of voltage sources can include a first voltage sourceconfigured to decrease a voltage level of a first voltage among theplurality of voltages; and a second voltage source configured toincrease a voltage level of a second voltage among the plurality ofvoltages.

The bandgap reference circuit can include a first trimmer configured toadjust a voltage level of the first voltage output from the firstvoltage source according to a voltage level of the second voltage; and amixer configured to adjust an aggregate ratio and combine the firstvoltage and the second voltage based on the aggregate ratio.

The bandgap reference circuit can further include a comparatorconfigured to compare a second voltage output from one of the pluralityof voltage sources with a first voltage output through the firsttrimmer. An adjustment, performed by the first trimmer, for at least onevoltage among the plurality of voltages can be monitored at a firsttemperature based on a comparison result of the comparator.

The mixer can adjust the voltage levels of the plurality of voltages ata second temperature, which is different from the first temperature, tobe equal to each other. The mixer can include a second trimer configuredto adjust a voltage level of the first voltage at the secondtemperature; a third trimer configured to adjust a voltage level of thesecond voltage at the second temperature; and a combiner configured tocombine outputs of the second trimer and the third trimer.

The bandgap reference circuit can further include a fourth trimerconfigured to adjust a voltage level of voltage output from the mixerbased on a preset reference.

The power circuit can further include a voltage sensor configured tomonitor whether a voltage level of the internal power supply voltage isbelow a present level.

Embodiments of the present disclosure will now be described withreference to the accompanying drawings, wherein like numbers referencelike elements.

FIG. 1 illustrates a memory system according to an embodiment of thepresent disclosure.

Referring to FIG. 1 , a memory system 10 can include a controller 30 anda memory device 50. Also, the memory system 10 can include a clocksignal generator 20.

According to an embodiment, the memory device 50 and the controller 30can be functionally separated components included in a single chip or asingle board. Also, according to another embodiment, the memory device50 and the controller 30 can be implemented through one semiconductordevice chip or a plurality of semiconductor device chips. According toanother embodiment, in a case when it is required that the memory system10 is manufactured with a high degree of integration, the memory device50 and the controller 30 can be implemented in a single semiconductordevice chip.

The controller 30 and the memory device 50 can be coupled through atleast one data path. For example, a data path can include a channelCH[0:n] or a way. In addition, the data path can be configured with aplurality of lines to transmit/receive plural data items at the sametime. The controller 30 can control and manage an operation for storingdata in the memory device 50 or outputting data stored in the memorydevice 50.

The memory device 50 can include a plurality of non-volatile memorycells or a plurality of volatile memory cells. The memory device 50 caninclude at least one die including plural memory cells. The memorydevice 50 may include a data transmission/reception circuit forperforming data communication with the controller 30. For example, thecontroller 30 and the memory device 50 can support an Open NAND FlashInterface (ONFi), a toggle mode, and the like for data transmission. Forexample, the ONFi can use a data path (e.g., a channel, a way, etc.)including a signal line capable of supporting bidirectionaltransmission/reception of 8-bit or 16-bit data item. Data communicationbetween the controller 30 and the memory device 50 can be performedthrough an interface to at least one of an asynchronous single data rate(SDR), a synchronous double data rate (DDR), and a toggle double datarate (DDR).

The clock signal generator 20 can supply a clock signal CLK into thecontroller 30 and the memory device 50. According to an embodiment, theclock signal generator 20 can receive a clock signal from an externaldevice and then modulate or modify the received clock signal to outputthe clock signal CLK. According to another embodiment, when power isapplied without receiving a clock signal from an external device, theclock signal generator 20 can generate and output the clock signal CLK,Referring to FIG. 1 , the clock signal generator 20 is separated fromthe controller 30. However, according to another embodiment, the clocksignal generator 20 can be included in the controller 30.

The clock signal CLK may be used as a reference for performing anoperation in the controller 30 and the memory device 50. For example,when the controller 30 transmits data to the memory device 50, the datacan be transmitted every cycle, or the data may be transmitted everyhalf cycle in response to the clock signal CLK. When the memory device50 performs an operation to read or store data, an operation margin forthe operation may be set based on a clock cycle (e.g., 3 cycles, 4cycles, . . . , 10 cycles, etc.). The clock signal CLK can affect amargin or speed of an operation performed in the memory system 10,activation or deactivation of the operation, and the like.

The memory system 10 is a type of semiconductor device which may beaffected by change or variation in a process, a voltage, and atemperature (PVT). In an embodiment, in order for the memory system 10to stably operate even with the change or variation in the PVT, theclock signal CLK output from the clock signal generator 20 should bestable and consistent even with the change in the PVT. For generating astable clock signal CLK, in an embodiment, the clock signal generator 20may include a bandgap reference circuit 22 and an oscillator 24.

In an embodiment, the bandgap reference circuit 22 can output areference current or a reference voltage used for generating a stableand consistent clock signal CLK even with the change in the PVT. Theoscillator 24 can output the clock signal CLK having a preset periodbased on the reference current or the reference voltage output from thebandgap reference circuit 22. Internal configuration and operation ofthe clock signal generator 20 is described later with reference to FIGS.3 and 10 .

FIG. 2 illustrates a semiconductor device according to anotherembodiment of the present disclosure.

Referring to FIG. 2 , a semiconductor device chip 60 can includeelectrical elements and circuits to perform a specific function. Thesemiconductor device chip 60 can include a plurality of pins or pads,and can receive or output a power voltage, a data item, a command, orvarious control signals through the plurality of pins or pads. Thecircuits or electrical elements included in the semiconductor devicechip 60 may vary depending on a design purpose, and the number of aplurality of pins or pads included in the semiconductor device chip mayalso vary depending on a design. For example, the memory system 10, thememory device 50, or the controller 30 shown in FIG. 1 can beimplemented in the semiconductor device chip 60.

The plurality of pins or pads may be used according to a preset functionor purpose. For example, when a specific pin or pad among the pluralityof pins or pads is set to be used for data input/output, an electricalsignal corresponding to the data item (e.g., a waveform or a potentialwithin a specific voltage range) is transmitted to the corresponding pinor pad. Also, when a power voltage is supplied to a specific pin or pad,the specific pin or pad may be used to receive a power voltage used foroperation of internal components included in the semiconductor devicechip 60.

In an embodiment, a semiconductor device such as a memory system or aprocessor which satisfies a user's needs may be developed to operate ata higher speed and consume less power. The semiconductor device chip 60can include plural circuits or modules to perform various functions.When a plurality of circuits, modules, or components that perform aplurality of functions are formed in plural different semiconductordevice chips, delay and noise may occur in the process of transferringdata and signals between circuits, modules or components of the pluraldifferent semiconductor device chips, so that operation performance ofthe memory system or the processor may be degraded. In an embodiment,the semiconductor device chip 60 may be designed to include variouscircuits, modules, or components, thereby improving performance of thesemiconductor device and increasing an integration degree of thesemiconductor device.

As a plurality of circuits, modules, or components are included in thesingle semiconductor device chip 60, a change of electrical loads insidethe semiconductor device chip 60 may increase. Referring to FIG. 2 , apower voltage VCC and a ground voltage VSS may be supplied through aplurality of pins or pads included in the semiconductor device chip 60to operate the plurality of circuits, modules, or components included inthe semiconductor device chip 60. The semiconductor device chip 60 caninclude a power circuit 80 that outputs an internal power supply voltageVCCI and an internal ground voltage VSSI, and a component 70 driven bythe internal power supply voltage VCCI and the internal ground voltageVSSI. The power circuit 80 can generate the internal power supplyvoltage VCCI and the internal ground voltage VSSI based on an externalpower voltage VCCE and an external ground voltage VSSE supplied throughat least one pin or pad.

The power circuit 80 can include a voltage regulator 82 and a voltagesensor 84. The voltage regulator 82 can be used to supply stable powerto an electronic device such as the memory system 10. Generally, thevoltage regulator 82 may be classified into a linear regulator and aswitching regulator. An example of the switching regulator can be aDC-DC converter. Although the DC-DC converter can have high conversionefficiency, the output voltage of the DC-DC converter may include a lotof noise compared to that of the linear regulator. An example of alinear regulator can be a low-dropout (LDO) regulator. In an embodiment,the LDO regulator may have low conversion efficiency. But, in anotherembodiment, the LDO regulator can have a fast response speed. In anembodiment, the output voltage of the LDO regulator can include asmaller amount of noise compared to that of the DC-DC converter. In anembodiment, the LDO regulator can be applicable to a noise-sensitivedevice or a device which should be driven with high performance. Forexample, in an embodiment the LDO regulator, which can compensate forthe disadvantages of the DC-DC converter, can be applicable to thememory system 10 operating at a high speed. The voltage regulator 82 canoutput the internal power supply voltage VCCI based on the externalpower voltage VCCE.

According to an embodiment, the component 70 described in FIG. 2 caninclude the memory device 50 shown in FIG. 1 . For example, the memorydevice 50 including non-volatile memory cells can include plural memoryblocks and a voltage supply circuit. According to an operation performedthrough the memory blocks and the voltage supply circuit, electricalloads of the component 70 may vary. Further, according to an embodiment,the component 70 can include at least one module or circuit included inthe controller 30. When an overload or an overcurrent occur due to astructure or an operation of the component 70, a change of the internalpower supply voltage VCCI or the internal ground voltage VSSI can occur.

The voltage sensor 84 may detect a change of the internal power supplyvoltage VCCI or the internal ground voltage VSSI. Due to the operationof the component 70, a phenomenon in which the internal ground voltageVCCI is changed or fluctuated at a specific position inside thesemiconductor device chip 60 may occur. The power supplied into thecomponent 70 may be determined based on a voltage difference between theinternal ground voltage VSSI and the internal power supply voltage VCCI.However, when the internal ground voltage VSSI is not maintained at alevel of 0V but is fluctuated or changed in a range of −500 mV to 500 mVor more, the power supplied into the component 70 may exceed a presetrange.

When the voltage regulator 82 generates the internal power supplyvoltage VCCI regardless of fluctuation of the internal ground voltageVSSI, a level of the internal power supply voltage VCCI, which is evenappropriately output from the voltage regulator 82, might not besupplied with the preset range into the component 70. For example, whenthe voltage regulator 82 outputs the internal power supply voltage VCCIof 5V based on the external ground voltage VSSE but the internal groundvoltage VSSI becomes 1V, the power supplied into the component 70 is avoltage of 4V based on the voltage difference between the internal powersupply voltage VCCI and the internal ground voltage VSSI. Substantially,in an embodiment, when a voltage of 4V is supplied into the component 70of the semiconductor device chip 60, an operation of the component 70may become unstable.

The voltage regulator 82 according to an embodiment may generate theinternal power supply voltage VCCI in response to the internal groundvoltage VSSI. For example, the voltage regulator 82 can output theinternal power supply voltage VCCI based on a sum of a reference voltageVref, which is independent from a change of the external power voltageVCCE, and the internal ground voltage VSSI which is fluctuated orchanged environmentally by the component 70. Herein, an environmentalchange may include change or variations of the process, the voltage, andthe temperature (e.g., Process-Voltage-Temperature (PVT) variations) inthe semiconductor device chip 60. For example, the voltage regulator 82may include an adder circuit capable of summing the reference voltageVref and the internal ground voltage VSSI. In a process of outputtingthe internal power supply voltage VCCI based on the sum of the referencevoltage Vref and the internal ground voltage VSSI, the voltage regulator82 can track a change of the internal ground voltage VSSI and stablysupply the internal power supply voltage VCCI into the component 70.

Referring to FIG. 2 , the voltage regulator 82 capable of outputting astable internal power supply voltage VCCI even with the change of thePVT can include a bandgap reference circuit 92 and a regulator 91. Forexample, in an embodiment, the bandgap reference circuit 92 can outputthe reference voltage Vref having a stable level even though the changeof the PVT occurs, and the regulator 91 can output the internal powersupply voltage VCCI based on the reference voltage Vref output from thebandgap reference circuit 92.

According to an embodiment, an apparatus such as the power circuit 80may be applicable to the memory system 10 including the non-volatilememory device 50. Also, according to another embodiment, the powercircuit may be applicable to a volatile memory device or a memory systemincluding the volatile memory device. The power circuit 80 may also beapplicable to a processor, a system IC, or the like which is designedfor a specific purpose.

FIG. 3 illustrates a clock signal generator according to anotherembodiment of the present disclosure.

Referring to FIG. 3 , a clock signal generator 100 can include arelaxation oscillator to generate a clock signal CLK used in the memorysystem 10 described with reference to FIG. 1 . The relaxation oscillatorcan generate a non-sine wave signal such as a triangular wave signal,etc., instead of a sine wave signal such as a square wave signal. Forexample, when the internal power supply voltage VCCI is applied to theclock signal generator 100, a current I can flow through an enabledevice 150 and a current source 110 so that an oscillation voltageV_(OSC) at a node connected to the capacitor C 140 can be generated.

The comparator 120 can compare the oscillation voltage V_(OSC) with areference voltage V_(REF), to output a comparison result. In response tothe comparison result of the comparator 120, a reset signal Reset isdetermined. The enable device 150 can be turned off or on by a resetsignal Reset. In addition, the comparison result of the comparator 120is input to a clock terminal CK of the flip-flop (F/F) 130. Because theinput terminal D and the output terminal QN of the flip-flop (F/F) 130are connected to each other through a feedback loop, the flip-flop (F/F)130 can repeatably invert an output result in response to the comparisonresult of the comparator 120. For example, an output result MCCK of theflip-flop (F/F) 130 can be repeatably changed from a logic low level toa logic high level, or vice versa. The output result MCCK can be used asthe clock signal CLK.

FIG. 4 describes an operation of the clock signal generator illustratedin FIG. 3 .

Referring to FIGS. 3 and 4 , when the internal power supply voltage VCCIis supplied, a current can flow through a path corresponding to theenable element 150 and the current source 110. When the current flows,the capacitor 140 can be charged. As the capacitor 140 becomes chargedwith charges, a level of the oscillation voltage V_(OSC) is changed.

The comparator 120 may compare the oscillation voltage V_(OSC) and thereference voltage V_(REF) The reference voltage V_(REF) has a stable andconstant voltage level, but the level of the oscillation voltage V_(OSC)varies. When the level of the oscillation voltage V_(OSC) changes andbecomes lower than the constant voltage level of the reference voltageV_(REF), the comparator 120 can change the comparison result of thecomparator 120. The comparison result of the comparator 120, as thereset signal Reset, can control the enable device 150. When the enabledevice 150 is turned off by the reset signal Reset, the level of theoscillation voltage V_(OSC) can increase due to charges charged in thecapacitor 140 and become higher than the level of the reference voltageV_(REF). When the comparison result of the comparator 120 changes, thereset signal Reset changes. When the internal power supply voltage VCCIis supplied and the enable device 150 is turned on, the level of theoscillation voltage V_(OSC) changes again.

The reset signal Reset is applied to the clock terminal CK of theflip-flop (F/F) 130, and the flip-flop (F/F) 130 may invert the outputresult MCCK in response to the reset signal Reset. The output resultMCCK of the flip-flop (F/F) 130 can be used as the clock signal CLK.

FIG. 5 illustrates a current source shown in FIG. 3 .

In an embodiment, the structure of the relaxation oscillator included inthe clock signal generator 100 described in FIG. 3 can generate a stable(or regular) oscillation voltage V_(OSC) even with the change oftemperature. For this purpose, the clock signal generator 100 could havea circuit or a structure for compensating for internal resistance changeaccording to the change of temperature to generate a fixed (or constant)voltage or current regardless of the temperature change.

A resistance included in the current source 110 disposed between theinternal power supply voltage VCCI and the ground voltage can beexpressed as described with reference to FIG. 5 . The resistance of thecurrent source 110 or other devices disposed between the internal powersupply voltage (VCCI) and the ground voltage can be considered the firstresistor R1, a variable (W/L)₂ based on the change of process, and thesecond resistor R2. For example, variations in W and L can be caused bya lithographic process. These variations are not correlated because W isdetermined in the field oxide step while L is defined in the poly andsource/drain diffusion steps. The comparator 120 can compare theoscillation voltage V_(OSC), which is changed by the current source 110disposed between the internal power supply voltage VCCI and the groundvoltage, with the reference voltage V_(REF) output from the bandgapreference circuit 22.

The resistances of the first resistor R₁ and the second resistor R₂ canvary according to the change of temperature. To reduce an effect causedby the change of temperature, a compensation value for the change oftemperature can be determined by a resistance of the third resistor R₃included in the bandgap reference circuit 22.

With respect to the oscillator 24 in the clock signal generator 20, thechange of resistances of the first resistor R₁ and the second resistorR₂ according to the change of temperature can be monitored or checked,For example, the resistances of the first resistor R₁ and the secondresistor R₂ can be calculated at different temperatures (e.g., 70degrees, 60 degrees, 50 degrees, 40 degrees, etc.). Based on calculatedresistances at different temperatures in a temperature range where, inan embodiment, it is guaranteed that the memory system 10 including theclock signal generator 100 operates stably, the compensation value forthe change of temperature change can be determined. In an embodiment, ifthe memory system 10 should be able to stably perform an operation in atemperature range of minus 30 degrees Celsius (−30° C.) to 100 degreesCelsius (100° C.), the corresponding temperature range may be dividedinto at least one preset range, and a compensation value according tothe temperature change in the at least one preset range can be tracked.In an embodiment, when the third resistor reflecting the obtainedcompensation value is determined, the clock signal generator 100 cangenerate a stable clock signal CLK even with the change of temperature.

FIG. 6 illustrates a reference current generator including a pluralityof current sources having different temperature trends.

Referring to FIG. 6 , a reference current generator 160 can include aplurality of current sources having different temperature coefficient.The plurality of current sources can include plural components havingdifferent current densities m1, m2, m3, m4. A gate-source voltageV_(GS2) can be adjustable by a variable resistor. For example, twocurrents generated by the reference current generator 160 can include afirst current I_PTAT and a second current I_CTAT. The Widlar currentsource, for example, nay be used as a current source for generating thefirst current (I_PTAT), and has a tendency to be insensitive to thechange of a power supply voltage level, but can have a characteristicproportional to the temperature (e.g., Proportional To AbsoluteTemperature, called PTAT). Further, a constant current source circuit,which is a current source for generating the second current I_CTAT, hasa tendency to be insensitive to the change of the power supply voltagelevel, but has a characteristic complementary to absolute temperature(CTAT). By adding the first current I_PTAT and the second current I_CTAThaving different characteristics in response to the change oftemperature, a tendency according to the change of temperature can beadjusted. An example of how to adjust the tendency according to thechange of temperature is described with reference to FIG. 7 .

FIG. 7 describes an operation of the reference current generator shownin FIG. 6 .

Referring to FIG. 7 , when the first current I_PTAT and the secondcurrent I_CTAT generated by the reference current generator 160 can beadjusted by various weightings, different results depending on thechange of temperature can be obtained.

In FIG. 7 , four examples are described. First, a first result accordingto a first option Opt0 can be obtained by adding a value, obtained bymultiplying the first current I_PTAT by 4, and another value obtained bymultiplying the second current I_CTAT by 0. A second result according toa second option Opt1 can be obtained by adding a value, obtained bymultiplying the first current I_PTAT by 3, and another value obtained bymultiplying the second current I_CTAT by 1. A third result according toa third option Opt2 may be obtained by adding a value obtained bymultiplying the first current I_PTAT by 2 and another value obtained bymultiplying the second current I_PTAT by 2. A fourth result according toa fourth option Opt3 can be obtained by adding a value obtained bymultiplying the first current I_PTAT by 1 and another value obtained bymultiplying the second current I_PTAT by 3. There may be a temperatureTcross at which the first to fourth results according to the firstoption Opt0 to the fourth option Opt3 intersect X-point. The temperatureTcross at which the first to fourth results according to the firstoption Opt0 to the fourth option Opt3 intersect can be considered atemperature at which the first current I_PTAT and the second currentI_CTAT have the same amount (i.e., I_PTAT=I_PTAT).

The reference current generator 160 can perform addition of the firstcurrent I_PTAT and the second current I_CTAT as well as curvaturecorrection simultaneously, so that the number of operational amplifiersand current mirrors included in the reference current generator 160 canbe reduced. When the number of operational amplifiers and currentmirrors decreases, the change of process for fabricating the referencecurrent generator 160 could be reduced. However, when the temperatureTcross at which the first to fourth results according to the firstoption Opt0 to the fourth option Opt3 intersect is not constantaccording to the change of process, it may be difficult, in anembodiment, to embed the reference current generator 160 in asemiconductor device or a memory system. In order to overcome thisissue, in an embodiment, a variable resistor can be included in thereference current generating device 160.

FIG. 8 describes temperature-specific characteristics of the referencecurrent generator shown in FIG. 6 .

Referring to FIG. 8 , a temperature Tcross at which the amounts of thefirst current I_PTAT and the second current I_CTAT generated by thereference current generator are equal to each other (e.g., 12 μA) may beat 50 degrees (50° C.). Thereafter, a temperature of the environment inwhich the reference current generator operates can be changed.Combination I_(SUM) of the first current I_PTAT and the second currentI_CTAT adjusted according to the change of temperature (e.g., adifferent temperature of 70 degrees, 70° C.) can be about 10 μA. Basedon a difference between the first currents I_PTAT and the secondcurrents I_CTAT at 50 degrees (50° C.) and 70 degrees (70° C.), atendency for the change of temperature may be estimated. Thereafter, thetemperature of the environment in which the reference current generatoroperates can be adjusted again (e.g., minus 10 degrees, −10° C.). At adifferent temperature (−10° C.), a compensation value for adjustment inthe first current I_PTAT and the second current I_CTAT can bedetermined.

When compensation values at plural temperatures are monitored or checkedin the operational environment and the tendency for the change oftemperature might be constant, the reference current generator couldeasily generate a reference current having a constant amount even withthe change of temperature, as compared to when the tendency for thechange of temperature is not constant after monitoring or checking thecompensation values at the plural temperatures. It is because it mightbe difficult for the reference current generator to generate thereference current having the constant amount even with the change oftemperature.

As described in FIG. 7 , in an embodiment, even though a variableresistor can be included in the reference current generator tocounteract the change of temperature, it might be difficult to generatethe reference current having a constant amount even with the change oftemperature when the tendency for the change of temperature is notconstant. Further, the compensation value corresponding to the change oftemperature can vary due to the change of process (e.g., fabrication ormanufacturing process) for the reference current generator.

FIG. 9 describes that compensation for a temperature change of thereference current generator shown in FIG. 6 varies according to a changein a manufacturing process.

Referring to FIG. 9 , a compensation value for the change of temperaturecan be estimated when designing and manufacturing a reference currentgenerator. For example, the reference current generator can be designedsuch that amounts of the first current I_PTAT and the second currentI_CTAT are equal to 10 μA at a specific temperature (e.g., 70 degrees).However, the amounts of the first current I_PTAT and the second currentI_CTAT might be different from a designed value because of the change ofprocess (e.g., fabrication or manufacturing process) for the referencecurrent generator.

For applying the compensation value, the amount of the first currentI_PTAT or the second current I_CTAT might be trimmed. For example, afterthe reference current generator is manufactured, the amounts of thefirst current I_PTAT and the second current I_CTAT can be equal to eachother (e.g., 12 μA) at a different temperature (e.g., 50 degrees). Inanother example, after the reference current generator is manufactured,the amounts of the first current I_PTAT and the second current I_CTATcan be equal to each other (e.g., 11 μA) at another temperature (e.g.,70 degrees). In another example, after the reference current generatoris manufactured, the amounts of the first current I_PTAT and the secondcurrent I_CTAT can be equal to each other (e.g., 8 μA) at anothertemperature (e.g., 90 degrees). Various above-described cases in which adesigned amount is not obtained at a target temperature might occur dueto the change of process (e.g., fabrication or manufacturing process)for the reference current generator.

Accordingly, in an embodiment of the present disclosure, the referencecurrent generator can have a structure in order to accurately set acompensation value in response to the change of temperature. Thestructure, in an embodiment, is for accurately reflecting the tendencyregarding the first current I_PTAT and the second current I_CTAT for thechange of temperature. In the embodiment, the reference currentgenerator can include a first trimer or adjustment means for makingamounts of the first current I_PTAT and the second current I_CTAT equal,a second trimer or adjustment means for adjusting weights for the firstcurrent I_PTAT and the second current I_PTAT before the first currentI_PTAT and the second current I_PTAT are combined, and a third trifleror adjustment means for adjusting an amount of a combined current of thefirst current I_PTAT and the second current I_CTAT.

FIG. 10 illustrates a clock signal generator according to anotherembodiment of the present disclosure.

Referring to FIG. 10 , the clock signal generator 300 can include somecomponents which are similar to those included in the clock signalgenerator 100 described in FIG. 3 . The clock signal generator 300 canuse a relaxation oscillator to generate the clock signal CLK used in thememory system 10 or the like described with reference to FIG. 1 . Forexample, when the internal power supply voltage VCCI is applied to theclock signal generator 300, a current can flow through an enable element350 and a first current source I_(PC1) 310. An oscillation voltageV_(OSC) can be generated at a node connected to a capacitor C 340.

The comparator 320 can compare the oscillation voltage V_(OSC) with thereference voltage V_(REF) to output a comparison result. The enableelement 350 can be turned off or on by a reset signal Resetcorresponding to the comparison result output from the comparator 320.Further, the comparison result of the comparator 320 can be input to theclock terminal CK of the flip-flops (F/F) 330. Because the inputterminal D and the output terminal QN of the flip-flop (F/F) 330 areconnected to each other through a feedback loop, the flip-flop (F/F) 330can repeatably invert an output result in response to the comparisonresult of the comparator 320. For example, an output result CK of theflip-flop (F/F) 330 can be repeatably changed from a logic low level toa logic high level, or vice versa. The output result CK can be used asthe clock signal CLK.

The clock signal generator 300 can include a reference voltage generator360 that generates a reference voltage V_(REF) input to the comparator320. The reference voltage generator 360 can include a resistor R and asecond current source I_(PC2) between the internal power supply voltageVCCI and the ground voltage. A detailed configuration of the referencevoltage generator 360 is described with reference to FIG. 11 .

FIG. 11 illustrates an example of a reference current generator shown inFIG. 10 .

Referring to FIG. 11 , the reference current generator 360 a can includea plurality of current sources 410, 420 having different temperaturecoefficients, each current source generating a different current. Athird current source 410 can generate a third current I_(CTAT) having acharacteristic insensitive to the level of the power supply voltage andcomplementary to absolute temperature (CTAT). A fourth current source420 can generate a fourth current I_(PTAT) having a characteristicinsensitive to the level of the power supply voltage and proportional toabsolute temperature (PTAT). For example, each current source caninclude at least one diode, diode-connected transistor, or bipolarjunction transistor (BJT) coupled between a power supply voltage and aground voltage. In an embodiment, the third and fourth current sources410, 420 can individually include at least one diode, diode-connectedtransistor, or bipolar junction transistor (BJT), which has differentcharacteristics for the temperature change. For example, componentsincluded in the third and fourth current sources 410, 420 can havedifferent sizes.

The reference current generator 360 a can include a first trimmer 430that adjusts an amount of the third current I_(CTAT). The first trimmer430 can adjust the amount of the third current I_(CTAT) to be equal toan amount of the fourth current I_(PTAT) at a first temperature byapplying a first weight W₁ to the third current I_(CTAT). For example,corresponding to a design of the reference current generator 360 a, thefirst trimmer 430 can reflect a compensation value at a temperatureTcross where the amounts of the first current I_PTAT and the secondcurrent I_CTAT are the same.

The reference current generator device 360 a can include a comparator440 that compares third current I_(CTAT) output through the firsttrimmer 430 with the fourth current I_(PTAT) output from the fourthcurrent source 420. The comparator 440 can compare the amounts of thethird current I_(CTAT) and the fourth current I_(PTAT) to output acomparison result CR, The comparison result CR can be used as anindicator or flag for confirming whether adjustment of the third currentI_(CTAT) output through the first trimmer 430 at the first temperatureis completed.

Further, the reference current generator 360 a can include a mixer 450capable of combining or summing the third current I_(CTAT) and thefourth current I_(PTAT). The mixer 450 may include a combiner 480 forcombining or summing the third current I_(CTAT) and the fourth currentI_(PTAT). Meanwhile, the mixer 450 does not simply combine or add thethird current I_(CTAT) and the fourth current I_(PTAT) to each other ata second temperature which is different from the first temperature. Inthe mixer 450, different third weights (e.g., W₃, 1−W₃) can be appliedto the third current I_(CTAT) and the fourth current I_(PTAT), so thatthe amounts of the third current I_(CTAT) and the fourth currentI_(PTAT) are the same. Then, the third current I_(CTAT) and the fourthcurrent I_(PTAT) can be combined. For these adjustments, the mixer 450can include a second trimmer 460 capable of adjusting an amount of thethird current I_(CTAT) at the second temperature and a third trimmer 470capable of adjusting an amount of the fourth current I_(PTAT) at thesecond temperature.

According to an embodiment, the second trimmer 460 and the third trimmer470 can determine in what ratio to combine the third current I_(CTAT)and the fourth current I_(PTAT) e.g., what proportion of the thirdcurrent I_(CTAT) and the fourth current I_(PTAT) would account for inthe combined current I_(SUM) of the third current I_(CTAT) and thefourth current I_(PTAT)). For example, if the second trimmer 460 adjustsa proportion of the third current I_(CTAT) to 70% (W₃), the thirdtrimmer 470 can adjust a proportion of the fourth current I_(PTAT) to30% (=100%−70%) (1−W₃). In another example, when the second trimmer 460adjusts the proportion of the third current I_(CTAT) to 45%, the thirdtrimmer 470 can adjust the proportion of the fourth current I_(PTAT) to55% (=100%−45%).

The reference current generator 360 a can include a fourth trimmer 490for adjusting the combined current I_(SUM) of the third current I_(CTAT)and the fourth current I_(PTAT) output from the mixer 450 in response tothe change of temperature. According to an embodiment, the fourthtrimmer 490 can adjust the combined current I_(SUM) of the third currentI_(CTAT) and the fourth current I_(PTAT) at a third temperature which isdifferent from the first temperature and the second temperature byapplying a second weight W₂ to the combined current I_(SUM). The currentoutput from the fourth trimmer 490 can be used as the reference currentI_(REF) by the clock signal generator 300. Thus, the current output fromthe fourth trimmer 490 could have a constant current amount suitable forthe clock signal generator 300. For example, when the clock signalgenerator 300 is designed to generate a clock signal based on a presetcurrent amount of the reference current I_(REF), the current output fromthe fourth trimmer 490 can have the preset current amount.

As described above, the reference current generator 360 a can includethe first trimmer 430 for adjusting the third current I_(CTAT) and thefourth current I_(PTAT) to have the same amounts to compensate for thechange of temperature change, as well as apply different weights K₁, K₂,K₃ to the third current I_(CTAT) and the fourth current I_(PTAT)according to the comparison result of the third current I_(CTAT) and thefourth current in I_(PTAT) the process of combing or summing thecombined current I_(SUM) of the third current I_(CTAT) and the fourthcurrent I_(PTAT). Also, the reference current generator 360 a canfurther adjust the combined current I_(SUM) of the third currentI_(CTAT) and the fourth current I_(PTAT) to compensate for the change oftemperature. The reference current generator 360 a described in FIG. 11, in an embodiment, can output a reference current I_(REF) having aconstant amount even with the change of temperature and the change ofprocess through three-step adjustments, so that a more accuratereference current I_(REF) can be supplied to the clock signal generator300.

FIG. 12 illustrates another example of the reference current generatorshown in FIG. 10 .

Referring to FIG. 12 , the reference current generator 360 b can performthe three-step adjustment regarding the third current I_(CTAT) and thefourth current I_(PTAT). In the three steps of adjustments TRIM_I,TRIM_II, TRIM_III for the third current I_(CTAT) and the fourth currentI_(PTAT), magnifications 1:K₁, 1:K₂, 1:K₃ applied in each step can beindependently determined. For example, the magnifications 1:K₁, 1:K₂,1:K₃ of the third current I_(CTAT) and the fourth current I_(PTAT) canbe differently adjusted for each step in different operationalenvironments (e.g., different temperatures). The magnifications 1:K₁,1:K₂, 1:K₃ can be determined in advance through a test on an operationof the reference current generator 360 b. Herein, K₁, K₂, and K₃ can bea positive number. When K₁, K₂, or K₃ is less than 1, the third currentI_(CTAT) or the fourth current I_(PTAT) can be adjusted to decrease anamount thereof. Or, when K₁, K₂, or K₃ is greater than 1, an amount ofthe third current I_(CTAT) or the fourth current I_(PTAT) can beadjusted to increase an amount thereof. In an embodiment, the outputcurrent I_(OUT) output from the reference current generator 360 b canhave a constant amount by compensating for the change of temperature.

FIG. 13 illustrates an effect corresponding to a temperature change inan operation of the reference current generator shown in FIG. 10 .

Referring to FIG. 13 , the effect of the three-step adjustment in thereference current generator 360 a, 360 b regarding compensationaccording to the change of temperature change is shown. First,characteristics or tendency according to the change of temperature afterthe reference current generator 360 a, 360 b is fabricated ormanufactured may be checked or monitored. For example, regarding a firstcharacteristic according to the change of temperature, the amounts ofthe third current I_(CTAT) and the fourth current I_(PTAT) are the same(e.g., 12 μA) at a specific temperature (e.g., 50 degrees).

Through a first-step adjustment (I) of adjusting the amount of the thirdcurrent I_(CTAT), characteristics of the reference current generator 360a, 360 b with respect to the change of temperature can be checked at adifferent temperature. For example, in a temperature (e.g, 70 degrees),the third current I_(CTAT) and the fourth current I_(PTAT) can have thesame amount of 13 μA.

Thereafter, through a second-step adjustment (II) in which differentweight are applied to the third current I_(CTAT) and the fourth currentI_(PTAT), the reference current generator 360 a, 360 b can adjust thethird current I_(CTAT) and the fourth current I_(PTAT) with respect tothe change of temperature. For example, at the temperature (e.g., 70degrees), the amounts of the third current I_(CTAT) and the fourthcurrent I_(PTAT) can be made equal to 10 μA.

Thereafter, through a third-step adjustment (III) of the combinedcurrent I_(SUM) of the third current I_(CTAT) and the fourth currentI_(PTAT), the reference current generating device 360 a, 360 b canadjust the third current I_(CTAT) and the fourth current I_(PTAT) withrespect to the change of temperature. For example, at minus 10 degreesCelsius (−10° C.), the combined current I_(SUM) of the third currentI_(CTAT) and the fourth current I_(PTAT) can be adjusted to be 10 μA.

Through the three-step adjustment I, II, III described above, thereference current generator can output the combined current I_(SUM) of10 μA in a range of operational temperature (e.g., minus 10 degrees tominus 70 degrees).

In a general reference current generator, operational characteristics atplural temperatures are checked, compensation values at the pluraltemperatures are determined, and the compensation values are used, as itis, for compensating for the change of temperature. However, accordingto an embodiment of present disclosure, the three-step adjustment candetermine a compensation value for the change in a wide temperaturerange by monitoring or checking operational characteristics of thereference current generator at several representative samplingtemperatures. Accordingly, in the embodiment, a test for checking ormonitoring operational characteristics of the reference currentgenerator at tens or hundreds of different temperatures might be notnecessary. In an embodiment, a test time of the reference currentgenerator can be reduced because the test might be not performed at tensor hundreds of different temperatures in an operable temperature range.

As above described, a semiconductor device according to an embodiment ofthe present disclosure can compensate for the change of temperature in alow power voltage environment.

The semiconductor device according to an embodiment of the presentdisclosure can support a memory system or a data processing system toperform a stable data input/output operation even though a temperatureinside of the memory system or the data processing system is changed orfluctuated.

While the present teachings have been illustrated and described withrespect to the specific embodiments, it will be apparent to thoseskilled in the art in light of the present disclosure that variouschanges and modifications may be made without departing from the spiritand scope of the disclosure as defined in the following claims.Furthermore, the embodiments may be combined to form additionalembodiments.

1. A bandgap reference circuit, comprising: a plurality of currentsources comprising different temperature coefficients; a first trimmerconfigured to adjust a current amount of one among a plurality ofcurrents, which are individually output from each of the plurality ofcurrent sources, to be equal to that of another among the plurality ofcurrents; a comparator configured to compare an adjusted current outputfrom the first trimmer with the another among the plural currentsources, wherein an adjustment, performed by the first trimmer, for theone among the plurality of currents is monitored at a first temperaturebased on a comparison result of the comparator; and a mixer configuredto adjust current amounts for the plurality of currents at a secondtemperature, which is different from the first temperature, to be equalto each other to determine an aggregate ratio and combine the pluralityof currents based on the aggregate ratio.
 2. The bandgap referencecircuit according to claim 1, wherein the plurality of current sourcescomprise: a first current source configured to decrease a current amountof a first current among the plurality of currents; and a second currentsource configured to increase a current amount of a second current amongthe plurality of currents.
 3. The bandgap reference circuit according toclaim 2, wherein the first current source comprises plural diodes,plural diode-connected transistors, or plural bipolar junctiontransistors (BJTs), and the second current source outputs a differencebetween currents flowing through two components having different sizesin the first current source.
 4. The bandgap reference circuit accordingto claim 2, wherein the first trimer adjusts an amount of the firstcurrent output from the first current source.
 5. (canceled)
 6. Thebandgap reference circuit according to claim 1, wherein the mixercomprises: a second trimer configured to adjust a current amount of thefirst current at the second temperature; a third trimer configured toadjust a current amount of the second current at the second temperature;and a combiner configured to combine outputs of the second trimer andthe third trimer.
 7. The bandgap reference circuit according to claim 1,further comprising: a fourth trimer configured to adjust a currentamount of current output from the mixer based on a preset reference. 8.A clock signal generator, comprising: a bandgap reference circuitcomprising: a first trimmer configured to adjust a current amount of oneamong a plurality of currents, which are individually output from eachof a plurality of current sources having different temperaturecoefficients, to be equal to each other, that of another among theplurality of currents; a comparator configured to compare an adjustedcurrent with another among the plurality of currents, and a mixerconfigured to adjust current amounts for the plurality of currents at asecond temperature to be equal to each other to determine an aggregateratio and combine the plurality of currents based on the aggregate ratioto output a combined current as a reference current, wherein anadjustment, performed by the first trimmer, for the one among theplurality of currents is monitored at a first temperature, which isdifferent from the second temperature, based on a comparison result ofthe comparator; and an oscillator configured to generate a clock signalbased on the reference current.
 9. The clock signal generator accordingto claim 8, wherein the plurality of current sources comprise: a firstcurrent source configured to decrease a current amount of a firstcurrent among the plurality currents; and a second current sourceconfigured to increase a current amount of a second current among theplurality of currents. 10-11. (canceled)
 12. The clock signal generatoraccording to claim 8, wherein the mixer comprises: a second trimerconfigured to adjust a current amount of the first current at the secondtemperature; a third trimer configured to adjust a current amount of thesecond current at the second temperature; and a combiner configured tocombine outputs of the second trimer and the third trimer.
 13. The clocksignal generator according to claim 12, wherein the bandgap referencecircuit further comprises: a fourth trimer configured to adjust acurrent amount of current output from the mixer based on a presetreference.
 14. A power circuit, comprising: a bandgap reference circuitcomprising: a first trimmer configured to adjust a voltage level of oneamong a plurality of voltages, which are individually output from eachof a plurality of voltage sources having different temperaturecoefficients, to be equal to that of another among the plurality ofvoltages, a comparator configured to compare an adjusted current withanother among the plurality of currents, and a mixer configured toadjust voltage levels for the plurality of voltages at a secondtemperature to be equal to each other to determine an aggregate ratioand combine the plurality of voltages based on the aggregate ratio tooutput a combined voltage as a reference voltage, wherein an adjustment,performed by the first trimmer, for the one among the plurality ofvoltages is monitored at a first temperature, which is different fromthe second temperature, based on a comparison result of the comparator;and a regulator configured to receive an external power voltage togenerate an internal power supply voltage based on the referencevoltage.
 15. The power circuit according to claim 14, wherein theplurality of voltage sources comprise: a first voltage source configuredto decrease a voltage level of a first voltage among the plurality ofvoltages; and a second voltage source configured to increase a voltagelevel of a second voltage among the plurality of voltages. 16-17.(canceled)
 18. The power circuit according to claim 14, wherein themixer comprises: a second trimer configured to adjust a voltage level ofthe first voltage at the second temperature; a third trimer configuredto adjust a voltage level of the second voltage at the secondtemperature; and a combiner configured to combine outputs of the secondtrimer and the third trimer.
 19. The power circuit according to claim18, wherein the bandgap reference circuit further comprises: a fourthtrimer configured to adjust a voltage level of voltage output from themixer based on a preset reference.
 20. The power circuit according toclaim 14, further comprising: a voltage sensor configured to monitorwhether a voltage level of the internal power supply voltage is below apresent level.